Intel Corporation
ELEMENTAL COMPOSITION TUNING FOR CHALCOGENIDE BASED MEMORY

Abstract:

A memory device including a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material; wherein a first deck of the plurality of decks comprises first memory cells with storage elements deposited at a first initial composition of a plurality of elements; and a second deck of the plurality of decks comprises second memory cells with storage elements deposited at a second initial composition of the plurality of elements.