Intel Corporation
Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

Abstract:

A magnetic tunneling junction (MTJ) memory device including a free and fixed (reference) magnet between first and second electrodes, and a synthetic antiferromagnet structure (SAF) structure between the fixed magnet and one of the electrodes. The SAF structure includes a magnetic skyrmion. Two magnetic skyrmions within a SAF structure may have opposing polarity. A SAF structure may further include a coupling layer between two magnetic layers, as well as interface layers separated from the coupling layer by one of the magnetic layers. The coupling layer may have a spin-orbit coupling effect on the magnetic layers that is of a sign opposite that of the interface layers, for example to promote formation of the magnetic skyrmions.