Intel Corporation
Complementary group III-nitride transistors with complementary polarization junctions

Abstract:

Group III-N transistors of complementary conductivity type employing two polarization junctions of complementary type. Each III-N polarization junction may include two III-N material layers having opposite crystal polarities. The opposing polarities may induce a two-dimensional charge sheet within each of the two III-N material layers. Opposing crystal polarities may be induced through introduction of an intervening layer between two III-N material layers. A III-N heterostructure may include two III-N polarization junctions. A 2D electron gas (2DEG) is induced at a first polarization junction and a 2D hole gas (2DHG) is induced at the second polarization junction. Transistors of complementary type may utilize a separate one of the polarization junctions, enabling III-N transistors to implement CMOS circuitry.