Intel Corporation
Quantum dot devices with diodes for electrostatic discharge protection

Abstract:

A quantum dot device is disclosed that includes a fin and a gate above the fin. The fin may extend away from a base and include a quantum well stack in which one or more quantum dots may be formed during operation of the quantum dot device. The gate may include a gate electrode material having a first portion and a second portion, where the first portion is above the quantum well stack and the second portion is a portion that is not above the quantum well stack and is separated from the base by an insulating material. The quantum dot device may further include a metal structure between the second portion of the gate electrode material and the base, forming a portion of a diode provided in series with the gate, which diode may provide at least some ESD protection for the quantum dot device.