Intel Corporation
Intra-semiconductor die communication via waveguide in a multi-die semiconductor package

Abstract:

An interposer layer includes an integral waveguide to facilitate high speed (e.g., greater than 80 GHz) communication between semiconductor dies in a semiconductor package. An interposer layer may include a waveguide member and a dielectric layer disposed adjacent at least a portion of an exterior perimeter of the waveguide member. The waveguide member includes a material having a first relative permittivity. The dielectric member includes a material having a second relative permittivity that is less than the first relative permittivity. The waveguide member and the dielectric member form an interposer layer having an upper surface and a lower surface. A first conductive sheet may be disposed proximate the upper surface of the interposer layer and a second conductive sheet may be disposed proximate the lower surface of the interposer layer.