Intel Corporation
SRAM using 2T-2S

Abstract:

A 2T-2S SRAM cell exhibiting a complementary scheme, that includes two selector devices that exhibit negative differential resistance. Advantages include lower area and better performance than traditional SRAM cells, according to some embodiments. The term 1T-1S refers to a transistor in series with a selector device. Accordingly, the term 2T-2S refers to two such 1T-1S structures.