Intel Corporation
Multiple reticle field semiconductor devices

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Abstract:

Techniques are described for fabricating integrated circuit devices that span multiple reticle fields. Integrated circuits formed within separate reticle fields are placed into electrical contact with each other by overlapping reticle fields to form an overlapping conductive interconnect. This overlapping conductive interconnect electrically connects an interconnect layer of a first reticle field with an interconnect layer of a second, laterally adjacent reticle field. The overlapping conductive interconnection extends into a common scribe zone between adjacent reticle fields.

Status:
Grant
Type:

Utility

Filling date:

29 Jun 2017

Issue date:

22 Jun 2021