Intel Corporation
Plane-less voltage reference interconnects

Last updated:

Abstract:

An electronic device comprises an integrated circuit (IC) die including a first plurality of contact pads; and a plurality of stacked interconnect layers. The plurality of stacked interconnect layer include a first interconnect layer including a first conductive plane, a first vertical interconnect portion, and dielectric material isolating the first vertical interconnect portion from the first conductive plane; and a second interconnect layer including a second conductive plane contacting the first conductive plane, a second vertical interconnect portion contacting the first vertical interconnect portion, and the dielectric material isolating the second vertical interconnect portion from the second conductive plane; wherein the first and second vertical interconnect portions are included in a first vertical interconnect through the first and second conductive planes that contacts a first contact pad of the first plurality of contact pads.

Status:
Grant
Type:

Utility

Filling date:

24 Jun 2019

Issue date:

15 Jun 2021