Intel Corporation
Metallization in integrated circuit structures

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Abstract:

Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire and the second nanowire may be less than 5 nanometers, and the metal region may include tungsten between the first nanowire and the second nanowire.

Status:
Grant
Type:

Utility

Filling date:

27 Dec 2019

Issue date:

25 May 2021