Intel Corporation
NON-LINEAR CLAMP STRENGTH TUNING METHOD AND APPARATUS

Abstract:

A 3-level ripple quantization scheme provides power transistor (MOS) strength-tuning mechanism focused on the transient clamp period. The 3-level ripple quantization scheme solves the digital low dropout's (D-LDO's) tradeoff between silicon area (e.g., decoupling capacitor size), quiescent power consumption (e.g., speed of comparators), wide load range, and optimal output ripple. The 3-level ripple quantization scheme eliminates oscillation risk from either wide dynamic range or parasitic by exploiting asynchronous pulse patterns. As such, ripple magnitude for both fast di/dt loading events and various steady-state scenarios are shrunk effectively, resulting significant efficiency benefits.