Intel Corporation
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING LOW ASPECT RATIO ISOLATION STRUCTURES AND SUBFINS

Abstract:

Gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfins, and method of fabricating gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfins, are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first subfin. A second vertical arrangement of horizontal nanowires is above a second subfin laterally adjacent the first subfin. An isolation structure is laterally between the first subfin and the second subfin, the isolation structure having a maximum height and a maximum width with a maximum height to maximum width ratio of less than 3:1.