Intel Corporation
ELECTROSTATIC DISCHARGE PROTECTION IN INTEGRATED CIRCUITS USING POSITIVE TEMPERATURE COEFFICIENT MATERIAL

Abstract:

Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC package support may include: a first conductive structure; a second conductive structure; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a positive temperature coefficient material.