Intel Corporation
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH INTERCONNECT FOR REDUCED PARASITIC CAPACITANCES
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Abstract:
Embodiments of the invention include a microelectronic device that includes a substrate, at least one dielectric layer on the substrate and a plurality of conductive lines within the at least one dielectric layer. The microelectronic device also includes an air gap structure that is located below two or more of the plurality of conductive lines.
Status:
Application
Type:
Utility
Filling date:
15 Mar 2021
Issue date:
1 Jul 2021