Intel Corporation
METAL SPACE CENTERED STANDARD CELL ARCHITECTURE TO ENABLE HIGHER CELL DENSITY

Abstract:

Embodiments disclosed herein include a semiconductor device. In an embodiment, the semiconductor device comprises a substrate, and a cell on the substrate. In an embodiment, the cell comprises a plurality of transistors over the substrate, and a first metal layer over the plurality of transistors. In an embodiment, the first metal layer comprises a first power line, wherein a width of the first power line is entirely within the cell, a second power line, wherein a width of the second power line is entirely within the cell, and a plurality of signal lines between the first power line and the second power line.