IPG Photonics Corporation
Process and system for uniformly crystallizing amorphous silicon substrate by fiber laser

Abstract:

The inventive system for crystallizing an amorphous silicon (a-Si) film is configured with a quasi-continuous wave fiber laser source operative to emit a film irradiating pulsed beam. The fiber laser source is operative to emit a plurality of non-repetitive pulses incident on the a-Si. In particular, the fiber laser is operative to emit multiple discrete packets of film irradiating light at a burst repetition rate (BRR), and a plurality of pulses within each packet emitted at a pulse repetition rate (PRR) which is higher than the BRR. The pulse energy, pulse duration of each pulse and the PRR are controlled so that each packet has a desired packet temporal power profile (W/cm.sup.2) and packet energy sufficient to provide transformation of a-Si to polysilicon (p-Si) at each location of the film which is exposed to at least one packets.