LG Display Co., Ltd.
Thin film transistor, display including the same, and method of fabricating the same
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Abstract:
A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.
Status:
Grant
Type:
Utility
Filling date:
6 Jul 2020
Issue date:
3 May 2022