Monolithic Power Systems, Inc.
SCHOTTKY CONTACT REGION FOR HOLE INJECTION SUPPRESSION

Abstract:

A power transistor having: a p-body region, coupled to a first voltage; a first p-type buried layer under the p-body region; a n-implant region surrounding the p-body region and the p-type buried layer; a p-implant region surrounding the n-implant region; and a p-implant guard ring region inserted into the n-implant region to split the n-implant region to a first part and a second part, wherein the first part of the n-implant region is between the p-body region and the p-implant guard ring region, and the second part of the n-implant region is between the p-implant guard ring region and the p-implant region; wherein the second part of the n-implant region has a Schottky contact region coupled to a second voltage via a metal contact.