Monolithic Power Systems, Inc.
FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING
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Abstract:
A field-plate trench FET having a drain region, an epitaxial layer, a source region, a gate conductive layer formed in a trench, a field-plate dielectric layer formed on vertical sidewalls of the trench, a well region formed below the trench, a source contact and a gate contact. When the well region is in direct physical contact with the gate conductive layer, the field-plate trench FET can be used as a normally-on device working depletion mode, and when the well region is electrically isolated from the gate conductive layer by the field-plate layer, the field-plate trench FET can be used as a normally-off device working in an accumulation-depletion mode.
Status:
Application
Type:
Utility
Filling date:
11 Jan 2022
Issue date:
5 May 2022