Monolithic Power Systems, Inc.
LDMOS DEVICE WITH A DRAIN CONTACT STRUCTURE WITH REDUCED SIZE

Abstract:

An LDMOS device with a plurality of drain contact structures. Each drain contact structure has a drain contact, a first drain contact metal layer and a via. The drain contact is positioned above a drain region. The first drain contact metal layer is positioned above the drain contact. The via is positioned above the first drain contact metal layer. The LDMOS device has a second drain contact metal layer conductively coupled to the via of each drain contact structure.