Monolithic Power Systems, Inc.
LDMOS device with sinker link

Last updated:

Abstract:

An LDMOS device with sinker link. The LDMOS device has a buried layer, a first well region and a sinker linking the buried layer and the first well region. The LDMOS device has a trench with its upper portion surrounded by the first well region and its lower portion surrounded by the sinker. The trench is formed so that the sinker can be formed by ion implantation through the trench. The trench is filled with non-conductive material.

Status:
Grant
Type:

Utility

Filling date:

16 Apr 2020

Issue date:

29 Jun 2021