Everspin Technologies, Inc.
METHODS FOR MANUFACTURING MAGNETORESISTIVE STACK DEVICES

Abstract:

Fabrication of a magnetic memory element, including a via (125) in an interlevel dielectric layer (120), providing an electrical connection between an underlying metal region (110) and a magnetoresistive stack device, such as a magnetic tunnel junction (150), involves forming a transition metal layer (130) in the via by atomic layer deposition. The via optionally includes a tantalum-rich layer (140) above, and/or a cap layer (115) below, the transition metal layer, and may have a diameter less than or equal than a diameter of the magnetoresistive stack device.