Everspin Technologies, Inc.
MAGNETORESISTIVE DEVICES AND METHODS THEREFOR

Abstract:

Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks--for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device--of the present disclosure include one or more multilayer synthetic antiferromagnetic structures--SAFs--or synthetic ferromagnetic structures--SyFs--(A) in order to promote stability of the SAF or SyF, e.g., for smaller-sized MTJs (200).