Everspin Technologies, Inc.
Method of manufacturing a magnetoresistive device

Last updated:

Abstract:

A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.

Status:
Grant
Type:

Utility

Filling date:

26 Nov 2019

Issue date:

22 Jun 2021