Everspin Technologies, Inc.
Method of manufacturing a magnetoresistive device
Last updated:
Abstract:
A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.
Status:
Grant
Type:
Utility
Filling date:
26 Nov 2019
Issue date:
22 Jun 2021