Everspin Technologies, Inc.
Stacked magnetoresistive structures and methods therefor

Abstract:

A magnetoresistive device may include a first plurality of magnetic tunnel junction (MTJ) bits arranged in a first XY plane, and a second plurality of MTJ bits arranged in a second XY plane that is spaced apart from the first XY plane in a Z direction. And, the MTJ bits of the first plurality of MTJ bits may be spaced apart from the MTJ bits of the second plurality of MTJ bits in the X and Y directions.