Everspin Technologies, Inc.
Feed forward bias system for MTJ voltage control
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Abstract:
The present disclosure is drawn to, among other things, a magnetic memory. The magnetic memory comprises a first common line, a second common line, and a memory cell. The magnetic memory further includes a bias voltage generation circuit and a voltage driver. The bias voltage generation circuit and the voltage driver are configured to provide driving voltages to the memory cell during access operations.
Status:
Grant
Type:
Utility
Filling date:
18 Jan 2019
Issue date:
19 May 2020