Everspin Technologies, Inc.
ANNULAR 3-DIMENSIONAL MAGNETORESISTIVE DEVICES AND METHODS THEREFOR
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Abstract:
A magnetoresistive device may include an annular-shaped magnetic tunnel junction (MTJ) bit having an inner end and an outer end. The MTJ bit may include an annular-shaped magnetically free region and an annular-shaped magnetically fixed region separated by an annular-shaped intermediate layer. A first electrical conductor may be in electrical contact with the inner end of the MTJ bit, and a second electrical conductor may be in electrical contact with the outer end of the MTJ bit.
Status:
Application
Type:
Utility
Filling date:
6 Mar 2019
Issue date:
12 Sep 2019