MACOM Technology Solutions Holdings, Inc.
EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF HIGH-VOLTAGE, HIGH-POWER ACTIVE DEVICES
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Abstract:
Extrinsic structure that is formed outside the active regions of active devices can influence aging characteristics and performance of the active devices. Extrinsic structure is described that can reduce gate leakage current in transistors by over four orders of magnitude.
Status:
Application
Type:
Utility
Filling date:
6 Aug 2019
Issue date:
23 Sep 2021