MACOM Technology Solutions Holdings, Inc.
Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon
Last updated:
Abstract:
Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Status:
Grant
Type:
Utility
Filling date:
4 Jun 2019
Issue date:
25 Jan 2022