MACOM Technology Solutions Holdings, Inc.
ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GALLIUM NITRIDE MATERIAL DEVICE

Abstract:

An electrode structure for a device, such as a GaN or AlGaN device is described. In one example, a method to form the structure includes providing a substrate including gallium nitride material, forming an insulating layer over a surface of the substrate, forming an opening in the insulating layer to expose a surface region of the substrate, depositing a barrier metal layer over the insulating layer and onto the surface region of the substrate through the opening, and depositing a conducting metal layer over the barrier metal layer. In one case, the barrier metal layer includes a layer of tungsten nitride. The layer of tungsten nitride is deposited over the insulating layer and onto the surface region of the substrate using atomic layer deposition. The barrier metal layer prevents lower barrier height metals in the conducting metal layer, for example, from reaching the surface of the gallium nitride material substrate.