MACOM Technology Solutions Holdings, Inc.
Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor

Last updated:

Abstract:

Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.

Status:
Grant
Type:

Utility

Filling date:

19 Jan 2018

Issue date:

16 Mar 2021