MACOM Technology Solutions Holdings, Inc.
PIN diode bias scheme to improve leakage characteristics and P1dB threshold level of reflective limiter device

Abstract:

An apparatus includes an input port, an output port, a first bias input, a first shunt PIN diode, a first radio frequency (RF) choke inductor, and a first direct current (DC) blocking capacitor. The input port may be connected to the output port, a first terminal of the first shunt PIN diode, and a first terminal of the first RF choke inductor. A second terminal of the first RF choke inductor is connected to a first terminal of the first DC blocking capacitor and the first bias input. A second terminal of the first shunt PIN diode and a second terminal of the first DC blocking capacitor are connected to a circuit ground potential. A first bias voltage having a magnitude lower than a knee voltage of the first shunt PIN diode is applied at the first bias input.