MACOM Technology Solutions Holdings, Inc.
High-voltage GaN high electron mobility transistors

Abstract:

High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.