MACOM Technology Solutions Holdings, Inc.
HETEROLITHIC MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES FORMED ON HIGHLY DOPED SEMICONDUCTOR

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Abstract:

Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.

Status:
Application
Type:

Utility

Filling date:

22 Feb 2021

Issue date:

1 Jul 2021