MACOM Technology Solutions Holdings, Inc.
FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTANCE THERMOMETRY

Abstract:

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.