MACOM Technology Solutions Holdings, Inc.
HIGH-VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTORS WITH REDUCED LEAKAGE CURRENT

Abstract:

High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.