Micron Technology, Inc.
SENSING OPERATIONS IN MEMORY
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Abstract:
The present disclosure includes apparatuses and methods related to sensing operations in memory. An example apparatus can include an array of memory cells; and a controller coupled to the array configured to sense a first memory cell based upon a first input associated with the memory cell and a second input and a third input associated with a second memory cell.
Status:
Application
Type:
Utility
Filling date:
16 Apr 2021
Issue date:
29 Jul 2021