Micron Technology, Inc.
Microelectronic devices with polysilicon fill material between opposing staircase structures, and related devices, systems, and methods

Abstract:

Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts--formed in at least one of the polysilicon fill material and the stack structure--deforming, misaligning, or forming electrical shorts with neighboring contacts.