Micron Technology, Inc.
Apparatus with a biasing mechanism and methods for operating the same
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Abstract:
Methods, apparatuses, and systems related to a memory device are described. The memory device may include a sense amplifier that is configured to simultaneously precharge sensing nodes therein and compensate for threshold voltage mismatches between any transistors therein. The sense amplifier may be configured to charge gut nodes therein without connecting to a separate precharging voltage.
Status:
Grant
Type:
Utility
Filling date:
6 Oct 2020
Issue date:
10 Aug 2021