Micron Technology, Inc.
Method for setting a reference voltage for read operations

Abstract:

Methods, systems, and devices for method for setting a reference voltage for read operations are described. A memory device may perform a first read operation on a set of memory cells using a first reference voltage and detect a first codeword based on performing the first read operation using the first reference voltage. The memory device may compare a first quantity of bits of the first codeword having a first logic value (e.g., a logic value `1`) with an expected quantity of bits having the first logic value (e.g., the expected quantity of logic value `1`s stored by the set of memory cells). The memory device may determine whether to perform a second read operation on the set of memory cells using a second reference voltage different than the first reference voltage (e.g., greater or less than the first reference voltage) based on the comparing.