Micron Technology, Inc.
Adjustment of read and write voltages using a space between threshold voltage distributions

Abstract:

A current demarcation voltage is determined, where the current demarcation voltage is to be applied to a memory cell for reading a state of the memory cell. Based on the current demarcation voltage and a space between a first threshold voltage distribution corresponding to a first state of the memory cell and a second threshold voltage distribution corresponding to a second state of the memory cell, a test demarcation voltage having a low error rate of reading the state of the memory cell is selected. The current demarcation voltage is set to correspond to the selected test demarcation voltage.