Micron Technology, Inc.
VOID FORMATION IN CHARGE TRAP STRUCTURES

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Abstract:

Electronic apparatus and methods of forming the electronic apparatus may include one or more charge trap structures for use in a variety of electronic systems and devices, where each charge trap structure includes a dielectric barrier between a gate and a blocking dielectric on a charge trap region of the charge trap structure. In various embodiments, a void is located between the charge trap region and a region on which the charge trap structure is disposed. In various embodiments, a tunnel region separating a charge trap region from a semiconductor pillar of a charge trap structure, can be arranged such that the tunnel region and the semiconductor pillar are boundaries of a void. Additional apparatus, systems, and methods are disclosed.

Status:
Application
Type:

Utility

Filling date:

7 May 2021

Issue date:

26 Aug 2021