Micron Technology, Inc.
MEMORY CELL PROGRAMMING

Abstract:

Methods of operating a memory, and memories configured to perform such methods, might include applying a programming pulse having a plurality of different voltage levels to a selected access line during a programming operation, and for each group of memory cells of a plurality of groups of memory cells of a plurality of memory cells selected for programming, enabling that group of memory cells for programming during a respective portion of the duration of the programming pulse of a corresponding voltage level of the plurality of different voltage levels, wherein memory cells of the plurality of memory cells selected for programming and having a particular intended data state are members of more than one of the groups of memory cells, and at least one of the groups of memory cells comprises a memory cell having the particular intended data state and a memory cell having a different intended data state