Micron Technology, Inc.
Adjustment of a voltage corresponding to an erase distribution of a memory sub-system in accordance with a selected rule

Abstract:

A processing device determines a set of difference error counts corresponding to multiple programming distributions of a memory sub-system. A valley having a lowest valley margin is identified based on a comparison of the set of difference error counts. Based on the set of difference error counts, a program targeting rule from a set of rules. A program targeting operation is performed, based on the program targeting rule, a program targeting operation to adjust a voltage associated with an erase distribution of the memory sub-system.