Micron Technology, Inc.
Integrated Memory with Redistribution of Capacitor Connections, and Methods of Forming Integrated Memory

Abstract:

Some embodiments include an integrated assembly. The integrated assembly includes active regions which each have a digit-line-contact-region between a pair of capacitor-contact-regions. The capacitor-contact-regions are arranged in a pattern such that six adjacent capacitor-contact-regions form a substantially rectangular configuration. Conductive redistribution material is coupled with the capacitor-contact-regions and extends upwardly and laterally outwardly from the capacitor-contact-regions. Upper surfaces of the conductive redistribution material are arranged in a pattern such that seven adjacent of the upper surfaces form a unit of a substantially hexagonal-close-packed configuration. Capacitors are coupled with the upper surfaces of the conductive redistribution material.