Micron Technology, Inc.
Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells And Operative Through-Array-Vias

Abstract:

A method used in forming a memory array comprising strings of memory cells and operative through-array-vias (TAVs) comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. The stack comprises a TAV region and an operative memory-cell-string region. Operative channel-material strings are formed in the stack in the operative memory-cell-string region and dummy channel-material strings are formed in the stack in the TAV region. At least a majority of channel material of the dummy channel-material strings is replaced in the TAN region with insulator material and operative TAVs are formed in the TAV region. Other methods and structures independent of method are disclosed.