Micron Technology, Inc.
Devices including vertical transistors, and related methods

Abstract:

A device comprises a first conductive line and a vertical transistor over the first conductive line. The vertical transistor comprises a gate electrode, a gate dielectric material overlying sides of the gate electrode, and a channel region on sides of the gate dielectric material, the gate dielectric material located between the channel region and the gate electrode. The device further comprises a second conductive line overlying a conductive contact of the at least one vertical transistor. Related devices and methods of forming the devices are also disclosed.