Micron Technology, Inc.
Apparatuses including laminate spacer structures, and related memory devices, electronic systems, and methods

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Abstract:

An apparatus comprises a conductive structure, another conductive structure, and a laminate spacer structure interposed between the conductive structure and the another conductive structure in a first direction. The laminate spacer structure comprises a dielectric spacer structure, another dielectric spacer structure, and an additional dielectric spacer structure interposed between the dielectric spacer structure and the another dielectric spacer structure. The additional dielectric spacer structure comprises at least one dielectric material, and gas pockets dispersed within the at least one dielectric material. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.

Status:
Grant
Type:

Utility

Filling date:

23 May 2019

Issue date:

2 Nov 2021