Micron Technology, Inc.
IDENTIFYING HIGH IMPEDANCE FAULTS IN A MEMORY DEVICE

Abstract:

Methods, systems, and devices related to identifying high impedance faults in a memory device are described. A memory device may perform a first write operation to write a first logic state to a memory cell. During the first write operation, the memory device may establish a connection between a supply line and a control line associated with applying an output of a driver of a digit line coupled to the memory cell. After performing the first operation, the memory device may configure the supply line in a floating state. After the supply line is floated, the memory device may perform a second write operation to write a second logic state to the memory cell. The memory device may perform a third operation for reading the memory cell. The memory device may determine the condition of the supply line or control based on the result of the read operation.