Micron Technology, Inc.
DIFFERENTIAL AMPLIFIER SENSING SCHEMES FOR NON-SWITCHING STATE COMPENSATION IN A MEMORY DEVICE

Abstract:

Methods, systems, and devices for differential amplifier schemes for non-switching state compensation are described. During a read operation, a first node of a memory cell may be coupled with an input of differential amplifier while a second node of the memory cell may be biased with a first voltage (e.g., to apply a first read voltage across the memory cell). The second node of the memory cell may subsequently be biased with a second voltage (e.g., to apply a second read voltage across the memory cell), which may support the differential amplifier operating in a manner that compensates for a non-switching state of the memory cell. By compensating for a non-switching state of a memory cell during read operations, read margins may be increased.