Micron Technology, Inc.
Semiconductor memory device and method of forming the same

Abstract:

A semiconductor memory device including an access transistor configured as a vertical transistor comprises a channel portion and a pair of source/drain regions; a storage capacitor connected to one of the pair of source/drain regions; a bit line connected to the other of the pair of source/drain regions, a first semiconductor layer provided in the source/drain region to which the bit line is connected. Preferably, the first semiconductor layer comprises SiGe.